DEVICE AND METHOD FOR DRY ETCHING,申请号JP20110124956-传众专利搜索

DEVICE AND METHOD FOR DRY ETCHING

申请公布号：JP2012253209(A)

申请号：JP20110124956

申请日期：2011.06.03

申请公布日期：2012.12.20

申请人：

ULVAC JAPAN LTD

发明人：KAMIMURA RYUICHIRO;WATANABE KAZUHIRO

分类号：H01L21/3065

主分类号：H01L21/3065

摘要：<P>PROBLEM TO BE SOLVED: To provide a device and method for dry etching, simplifying a gas supply system and capable of improving the anisotropy of an etching shape. <P>SOLUTION: A device for dry etching includes: a processing chamber 12 housing a substrate Sb having a silicon oxide film; a substrate electrode stage 20 to which high frequency power is fed, while being brought into contact with the substrate Sb via a dielectric; a carbon ring 26 arranged while being in direct contact with on the substrate electrode stage 20; a gas supply system 15 supplying etching gas comprising carbon tetrafluoride and inert gas into the processing chamber 12; and a high frequency antenna 30 and a high frequency power source 31 which change the etching gas into a plasma by inductive coupling. <P>COPYRIGHT: (C)2013,JPO&INPIT