Structure for protecting an integrated circuit against electrostatic discharges

申请公布号：US8331069(B2)

申请号：US20100759922

申请日期：2010.04.14

申请公布日期：2012.12.11

申请人：

GALY PHILIPPE;ENTRINGER CHRISTOPHE;BOURGEAT JOHAN;STMICROELECTRONICS SA

发明人：GALY PHILIPPE;ENTRINGER CHRISTOPHE;BOURGEAT JOHAN

分类号：H02H9/00

主分类号：H02H9/00

摘要：A structure for protecting an integrated circuit against electrostatic discharges, comprising an assembly of identical cells, each of which is connected to a terminal forming a pad of the circuit, a first supply rail, or a second supply rail, the cells forming between any two of said terminals an assembly of four alternated layers of different conductivity types.

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