Data structure for flash memory and data reading/writing method thereof,申请号US201213344671-传众专利搜索

Data structure for flash memory and data reading/writing method thereof

申请公布号：US8327230(B2)

申请号：US201213344671

申请日期：2012.01.06

申请公布日期：2012.12.04

申请人：

NI JIAN-QIANG;HE DONG-YU;LIAO CHUN-TING;REALTEK SEMICONDUCTOR CORP.

发明人：NI JIAN-QIANG;HE DONG-YU;LIAO CHUN-TING

分类号：G11C29/00

主分类号：G11C29/00

摘要：A data structure for a flash memory and data reading/writing method thereof are disclosed. A 512 bytes data and a redundant code derived from the data encoded with a 6-bit error correcting code scheme are stored in a first sector and a second sector with sequential address in a block of the flash memory respectively. A logic block address information of this block is divided into two parts that are stored in the first sector and the second sector respectively.