Substrate, epitaxial layer provided substrate, method for producing substrate, and method for producing epitaxial layer provided substrate,申请号US200913062590-传众专利搜索

Substrate, epitaxial layer provided substrate, method for producing substrate, and method for producing epitaxial layer provided substrate

申请公布号：US8268643(B2)

申请号：US200913062590

申请日期：2009.09.04

申请公布日期：2012.09.18

申请人：

MATSUMOTO NAOKI;SUMITOMO ELECTRIC INDUSTRIES, LTD.

发明人：MATSUMOTO NAOKI

分类号：H01L21/66

主分类号：H01L21/66

摘要：The present invention provides a substrate formed at a low cost and having a controlled plate shape, an epitaxial layer provided substrate obtained by forming an epitaxial layer on the substrate, and methods for producing them. The method for producing the substrate according to the present invention includes an ingot growing step serving as a step of preparing an ingot formed of gallium nitride (GaN); and a slicing step serving as a step of obtaining a substrate formed of gallium nitride, by slicing the ingot. In the slicing step, the substrate thus obtained by the slicing has a main surface with an arithmetic mean roughness Ra of not less than 0.05 μm and not more than 1 μm on a line of 10 mm.