FABRICATING METHOD OF ORGANIC THIN FILM TRANSISTOR HAVING A HYDROPHOBIC LAYER,申请号US201213479285-传众专利搜索

FABRICATING METHOD OF ORGANIC THIN FILM TRANSISTOR HAVING A HYDROPHOBIC LAYER

申请公布号：US2012231578(A1)

申请号：US201213479285

申请日期：2012.05.24

申请公布日期：2012.09.13

申请人：

CHEN LIANG-HSIANG;LIAO KO-PIN;HO JIA-CHONG;INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

发明人：CHEN LIANG-HSIANG;LIAO KO-PIN;HO JIA-CHONG

分类号：H01L51/40

主分类号：H01L51/40

摘要：A fabricating method of an organic thin film transistor having a hydrophobic layer is provided. The organic thin film transistor including a gate, a gate insulator covering the gate, a source, a drain, an organic semiconductor layer, a hydrophobic layer and a protecting droplet. A hydrophobic region is formed by forming the hydrophobic layer on a surface of the source and a surface of the drain, respectively. Meanwhile, a hydrophilic region is formed on the organic semiconductor layer exposed by the hydrophobic layer. The protecting droplet is self-assemblingly formed on the organic semiconductor layer to protect the device characteristic by using the surface tension thereof.