COMPOSITION FOR FORMING OXIDE SEMICONDUCTOR, INKJET PRINTING PROCESS USING THE SAME AND ELECTRONIC DEVICE INCLUDING THE OXIDE SEMICONDUCTOR THIN FILM,申请号KR20100139354-传众专利搜索

COMPOSITION FOR FORMING OXIDE SEMICONDUCTOR, INKJET PRINTING PROCESS USING THE SAME AND ELECTRONIC DEVICE INCLUDING THE OXIDE SEMICONDUCTOR THIN FILM

申请公布号：KR20120077415(A)

申请号：KR20100139354

申请日期：2010.12.30

申请公布日期：2012.07.10

申请人：

SAMSUNG ELECTRONICS CO., LTD.;INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY

发明人：PARK, KYUNG BAE;RYU, MYUNG KWAN;LEE, KWANG HEE;SEON, JONG BAEK;BAE, JUNG HYEON;JEONG, WOONG HEE;LEE, SANG YOON;KIM, HYUN JAE

分类号：H01B5/14;H01L29/786

主分类号：H01B5/14

摘要：PURPOSE: A composition for forming an oxide semiconductor, an inkjet printing process using the same, and an electronic device including the oxide semiconductor thin film are provided to obtain an oxide semiconductor without defects through an inkjet printing process by using a composition containing a fixed quantity of sol stabilizer. CONSTITUTION: A gate electrode(20) and a gate insulation layer(21) covering the gate electrode are formed on a substrate(10). A channel layer(22) corresponding to the gate electrode is formed on the gate insulation layer. A source electrode(24a) and a drain electrode(24b) are formed on both sides of the channel layer. An etch stopper is formed between the source electrode and the drain electrode. The gate electrode controls the current flow between the source electrode and the drain electrode.