ESD Protection Device

申请公布号：KR101159114(B1)

申请号：KR20050044232

申请日期：2005.05.25

申请公布日期：2012.06.25

分类号：H01L27/04

主分类号：H01L27/04

摘要：An ESD protection device is provided to operate preferably under low-voltage environment by lowering a trigger voltage of the ESD protection device. An ESD protection device comprises an ESD MOS transistor(40), a potential MOS transistor(60), and a load resistance(80). In the ESD MOD transistor, one end of a channel is connected to an input/output pad(20) and the other end of the channel is connected to a ground voltage node. In the potential MOS transistor, one end of a channel is connected to a gate of the ESD MOS transistor and the other end of the channel is connected to the ground voltage node. One end of the load resistance is connected to a gate of the potential MOS transistor, and the other end is connected to a power voltage node.

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