DIELECTRIC BARRIER DEPOSITION USING NITROGEN CONTAINING PRECURSOR,申请号KR20100044970-传众专利搜索

DIELECTRIC BARRIER DEPOSITION USING NITROGEN CONTAINING PRECURSOR

申请公布号：KR101144535(B1)

申请号：KR20100044970

申请日期：2010.05.13

申请公布日期：2012.05.11

分类号：H01L21/31;H01L21/28;H01L21/3205

主分类号：H01L21/31

摘要：A process for forming a silicon carbonitride barrier dielectric film between a dielectric film and a metal interconnect of an integrated circuit substrate, comprising the steps of; providing an integrated circuit substrate having a dielectric film or a metal interconnect; contacting the substrate with a barrier dielectric film precursor comprising: €ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ R x R y (NR"R"') z Si wherein R, R', R" and R"' are each individually selected from hydrogen, linear or branched saturated or unsaturated alkyl, or aromatic; wherein x+y+z=4; z = 1 to 3; but R, R' cannot both be hydrogen; and where z = 1 or 2 then each of x and y are at least 1; forming the silicon carbonitride barrier dielectric film with C/Si ratio>0.8 and a N/Si ratio >0.2 on the integrated circuit substrate.