Method for forming a pixel of an electroluminescence device having storage capacitors,申请号US201113031712-传众专利搜索

Method for forming a pixel of an electroluminescence device having storage capacitors

申请公布号：US8158477(B2)

申请号：US201113031712

申请日期：2011.02.22

申请公布日期：2012.04.17

申请人：

SUN WEIN-TOWN;AU OPTRONICS CORPORATION

发明人：SUN WEIN-TOWN

分类号：H01L21/8242

主分类号：H01L21/8242

摘要：A method for forming a pixel of an electroluminescence device includes providing a substrate; defining at least a first area for capacitors and a second area for a transistor on the substrate; forming a first conductive layer over the first area; forming a first dielectric layer over the first conductive layer; forming a second conductive layer over the first dielectric layer; forming a second dielectric layer over the second conductive layer; forming a third conductive layer over the second dielectric layer; forming a layer of capping silicon nitride between the second dielectric layer and the third conductive layer; forming a semiconductor layer over the second area; forming a gate oxide layer over the second area; and forming a fourth conductive layer over the gate oxide layer.