VERTICAL GEOMETRY INGAN LED

申请公布号：CA2344391(C)

申请号：CA19992344391

申请日期：1999.09.16

申请公布日期：2012.02.07

申请人：

CREE, INC.

发明人：DOVERSPIKE, KATHLEEN MARIE;EDMOND, JOHN ADAM;KONG, HUA-SHUANG;DIERINGER, HEIDI MARIE;SLATER, DAVID B., JR.

分类号：H01L33/32;H01L21/205;H01L33/00

主分类号：H01L33/32

摘要：<p>A vertical geometry light emitting diode is disclosed that is capable of emitting light in the red, green, blue, violet and ultraviolet portions of the electromagnetic spectrum. The light emitting diode includes a conductive silicon carbide substrate, an InGaN quantum well, a conductive buffer layer between the substrate and the quantum well, a respective undoped gallium nitride layer on each surface of the quantum well, and ohmic contacts in a vertical geometry orientation.</p>

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