MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME,申请号US201013003723-传众专利搜索

MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

申请公布号：US2011260231(A1)

申请号：US201013003723

申请日期：2010.09.21

申请公布日期：2011.10.27

申请人：

INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OFSCIENCES

发明人：LIANG QINGQING;ZHONG HUICAI

分类号：H01L27/108;H01L21/8242;H01L21/84

主分类号：H01L27/108

摘要：The present application discloses a memory device and a method for manufacturing the same. The memory device comprising an MOSFET formed in a semiconductor layer and a capacitor structure below the MOSFET, wherein the capacitor structure comprises two capacitor electrodes, and one of a source region and a drain region of the MOSFET is electrically connected to one of the two capacitor electrodes, wherein the capacitor structure comprises a plurality of first sub-capacitors and a plurality of second sub-capacitors which are stacked in an alternate manner, each of the plurality of the first sub-capacitors and the plurality of the second sub-capacitors comprises a top capacitor plate, a bottom capacitor plate and a dielectric layer sandwiched therebetween, and the plurality of the first sub-capacitors and the plurality of the second sub-capacitors are connected in parallel with the two capacitor electrodes, and wherein each of the first sub-capacitors has a bottom capacitor plate which is formed from a common first electrode layer with a top capacitor plate of an underlying second sub-capacitor, and each of the second sub-capacitors has a bottom capacitor plate which is formed from a common second electrode layer with a top capacitor plate of an underlying first sub-capacitor, and wherein the first electrode layer and the second electrode layer are made of different conductive materials.