Integrated CMOS porous sensor,申请号US201113065293-传众专利搜索

Integrated CMOS porous sensor

申请公布号：US2011226041(A1)

申请号：US201113065293

申请日期：2011.03.18

申请公布日期：2011.09.22

申请人：

CHIPSENSORS LIMITED.

发明人：CUMMINS TIMOTHY

分类号：G01N33/00;G01N7/00;G01N25/00;H01L27/092

主分类号：G01N33/00

摘要：A single chip wireless sensor comprises a microcontroller connected to a transmit/receive interface, which is coupled to a wireless antenna by an L-C matching circuit. The sensor senses gas or humidity and temperature. The device is an integrated chip manufactured in a single process in which both the electronics and sensor components are manufactured using standard CMOS processing techniques, applied to achieve both electronic and sensing components in an integrated process. A Low-K material with an organic polymer component is spun onto the wafer to form a top layer incorporating also sensing electrodes. This material is cured at 300° C., which is much lower than CVD temperatures. The polyimide when cured becomes thermoset, and the lower mass-to-volume ratio resulting in K, its dielectric constant, reducing to 2.9. The thermoset dielectric, while not regarded as porous in the conventional sense, has sufficient free space volume to admit enough gas or humidity for sensing.