Electron beam apparatus and method of generating an electron beam irradiation pattern,申请号US20090630346-传众专利搜索

Electron beam apparatus and method of generating an electron beam irradiation pattern

申请公布号：US8008622(B2)

申请号：US20090630346

申请日期：2009.12.03

申请公布日期：2011.08.30

申请人：

HITACHI HIGH-TECHNOLOGIES CORPORATION;CANON INC.

发明人：FUJITA RYO;YODA HARUO;ANDO KIMIAKI;INOUE YUJI;MURAKI MASATO

分类号：H01J37/26

主分类号：H01J37/26

摘要：High-contrast exposure is performed by use of a small dose of electron beams, a pattern is formed on a wafer with high accuracy, and high-precision inspection is performed. In pattern formation, proximity effect correction processing is performed. Moreover, exposure of electron beams is performed based on a result of filtering using an inverse characteristic of exposure characteristics of the electron beams. Furthermore, in pattern inspection, electron beams are irradiated based on a result of filtering for obtaining a peripheral region of an edge of the pattern formed.