POWER MOSFET AND METHOD OF FORMING THE SAME,申请号US20100685644-传众专利搜索

POWER MOSFET AND METHOD OF FORMING THE SAME

申请公布号：US2011169076(A1)

申请号：US20100685644

申请日期：2010.01.11

申请公布日期：2011.07.14

申请人：

EXCELLIANCE MOS CORPORATION

发明人：CHANG YI-CHI;WU CHIA-LIEN

分类号：H01L29/78;H01L21/336

主分类号：H01L29/78

摘要：A power MOSFET is described. A trench is in a body layer and an epitaxial layer. An isolation structure is on the substrate at one side of the trench. An oxide layer is on the surface of the trench. A first conductive layer fills the trench and extends to the isolation structure. A dielectric layer is on the first conductive layer and isolation structure and has an opening exposing the first conductive layer. At least one source region is in the body layer at the other side of the trench. A second conductive layer is on the dielectric layer and electrically connected to the source region while electrically isolated from the first conductive layer by the dielectric layer. A third conductive layer is on the dielectric layer and electrically connected to the first conductive layer through the opening of the dielectric layer. The second and third conductive layers are separated.