SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME,申请号KR20100001073-传众专利搜索

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

申请公布号：KR20110080718(A)

申请号：KR20100001073

申请日期：2010.01.07

申请公布日期：2011.07.13

申请人：

HYNIX SEMICONDUCTOR INC.

发明人：LEE, EUN SUNG

分类号：H01L21/336;H01L29/78

主分类号：H01L21/336

摘要：<p>PURPOSE: A semiconductor device and a manufacturing method thereof are provided to prevent a high electric field due to overlapping or contact between a source area and a drain area. CONSTITUTION: An active area on a semiconductor substrate(202) is divided into an upper part and a lower part. A channel ion area is formed in the lower part of the active area. A source and a drain are formed on the active area. The steps of forming an upper part and a lower part on the semiconductor substrate comprise the following steps. A lower part of the active area is formed on the semiconductor substrate.</p>