SILICON SINGLE CRYSTAL WAFER FOR IGBT AND METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL WAFER FOR IGBT,申请号SG20110011756-传众专利搜索

SILICON SINGLE CRYSTAL WAFER FOR IGBT AND METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL WAFER FOR IGBT

申请公布号：SG170005(A1)

申请号：SG20110011756

申请日期：2007.02.16

申请公布日期：2011.04.29

申请人：

SUMCO CORPORATION

发明人：ONO TOSHIAKI;UMENO SHIGERU;SUGIMURA WATARU;HOURAI MASATAKA

摘要：<p>In this silicon single crystal wafer for IGBT, COP defects and dislocation clusters are eliminated from the entire region in the radial direction of the crystal, the interstitial oxygen concentration is 8.5x1017 atoms/cm2 or less, and variation in resistivity within the wafer surface is 5% or less. This method for manufacturing a silicon single crystal wafer for IGBT includes introducing a hydrogen atom-containing substance into an atmospheric gas at a hydrogen gas equivalent partial pressure of 40 to 400Pa, and growing a single crystal having an interstitial oxygen concentration of 8.5x1017 atoms/cm3 or less at a silicon single crystal pulling speed enabling pulling of a silicon single crystal free of grown-in defects. The pulled silicon single crystal is irradiated with neutrons so as to dope with phosphorous; or an n-type dopant is added to the silicon melt; or phosphorous is added to the silicon melt so that the phosphorous concentration in the silicon single crystal is 2.9x1013 to 2.9x 1015 atoms/cm3 and a p-type dopant having a segregation coefficient smaller than that of the phosphorous is added to the silicon melt so that the concentration in the silicon single crystals is 1x1013 to 1x1015 atoms/cm3 corresponding to the segregation coefficient thereof.</p>