A MEMORY DEVICE AND A METHOD OF MANUFACTURING THE MEMORY DEVICE,申请号WO2010EP64060-传众专利搜索

A MEMORY DEVICE AND A METHOD OF MANUFACTURING THE MEMORY DEVICE

申请公布号：WO2011036214(A1)

申请号：WO2010EP64060

申请日期：2010.09.23

申请公布日期：2011.03.31

申请人：

UNIVERSITE CATHOLIQUE DE LOUVAIN;TANG, XIAOHUI;RASKIN, JEAN-PIERRE

发明人：TANG, XIAOHUI;RASKIN, JEAN-PIERRE

分类号：H01L21/28;G11C16/04;H01L21/336;H01L29/423;H01L29/788

主分类号：H01L21/28

摘要：<p>A semiconductor memory device is provided with a source and a drain electrode between which a channel extends, one, two or more nano floating gates overlying said channel, and a control gate. It is manufactured in that an insulating substrate is provided with an alternating layer stack of a first and a second semiconductor material, for instance Si/SiGe/Si/SiGe/Si/BOX or Si/SiGe/Si/BOX stacks. The alternating layer stack is patterned down to the insulating substrate according to a predefined pattern including the source electrode, the drain electrode and a channel region extending between said electrodes. The patterned alternating layer stack is then oxidized, such that the second semiconductor material in the channel region is completely oxidized under certain conditions to separate the channel from the floating gates made of first semiconductor material or the second semiconductor material agglomerates under other conditions to form one of the floating gates. The semiconductor memory device preferably comprises a first and a second floating gate on top of each other, which are self-aligned with said channel. The present technology makes it possible to realize multil-bit memory cells and qubit quantum computers.</p>