衬底结构及其制造方法

申请公布号：CN101997071A

申请号：CN201010256572.8

申请日期：2010.08.17

申请公布日期：2011.03.30

申请人：

三星电子株式会社

发明人：金峻渊;洪贤基;卓泳助;李在原;丁亨洙

分类号：H01L33/20(2010.01)I;H01L33/00(2010.01)I

主分类号：H01L33/20(2010.01)I

代理机构：

北京市柳沈律师事务所 11105

代理人：冯玉清

地址：韩国京畿道

摘要：本发明涉及衬底结构及其制造方法。通过在缓冲层之下形成衬底的突出区域以及在缓冲层上形成半导体层而制造衬底结构，由此在除了在形成突出部的区域以外的区域将衬底与缓冲层分开。不与衬底接触的缓冲层上的半导体层具有独立特性，可以减少或防止位错或裂纹。

主权项：一种衬底结构，包括：衬底，包括衬底突出部；以及缓冲层，在所述衬底突出部上，所述衬底突出部将所述缓冲层与部分所述衬底分开。

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