Semiconductor devices and manufacturing method thereof,申请号US20070440939-传众专利搜索

Semiconductor devices and manufacturing method thereof

申请公布号：US7879705(B2)

申请号：US20070440939

申请日期：2007.09.21

申请公布日期：2011.02.01

申请人：

TOYOTA JIDOSHA KABUSHIKI KAISHA

发明人：KAWAHASHI AKIRA;SUGIMOTO MASAHIRO;SEKI AKINORI;MAEDA MASAKATSU;TAKAHASHI YASUO

分类号：H01L21/28;H01L21/44

主分类号：H01L21/28

摘要：A method is set forth of forming an ohmic electrode having good characteristics on a SiC semiconductor layer. In the method, a Ti-layer and an Al-layer are formed on a surface of the SiC substrate. The SiC substrate having the Ti-layer and the Al-layer is maintained at a temperature that is higher than or equal to a first temperature and lower than a second temperature until all Ti in the Ti-layer has reacted with Al. The first temperature is the minimum temperature of a temperature zone at which the Ti reacts with the Al to form Al3Ti, and the second temperature is the minimum temperature of a temperature zone at which the Al3Ti reacts with SiC to form Ti3SiC2. As a result of this maintaining of temperature step, an Al3Ti-layer is formed on the surface of the SiC substrate. The method also comprises further heating the SiC substrate having the Al3Ti-layer to a temperature that is higher than the second temperature. As a result of this step of further heating the SiC substrate reacts with Al3Ti of the Al3Ti-layer to form a Ti3SiC2-layer on the surface of the SiC substrate.