SEMICONDUCTOR DEVICE

申请公布号：US2011006420(A1)

申请号：US20100878536

申请日期：2010.09.09

申请公布日期：2011.01.13

申请人：

SEIKO EPSON CORPORATION

发明人：TAJIMI SHIGEHISA

分类号：H01L23/498

主分类号：H01L23/498

摘要：A method for manufacturing a semiconductor device includes: preparing a wiring board having a base substrate and wiring that is plated on surface with a plating metal; pressing a bump that is formed on the active side of the semiconductor chip against an end part of the wiring of the wiring board, thereby exfoliating the area surrounding the pressed portion of the wiring from the base substrate while keeping the end of the wiring bonded with the base substrate; melting the plating metal that is located on the end part of the wiring, thereby causing the plating metal and the bump to form an alloy that bonds the bump and the wiring and infiltrate the plating metal into a space between the wiring and the base substrate; and judging that the bump and the wiring are well bonded if the plating metal has infiltrated a space between the wiring and the base substrate so as to have an area, width or length of infiltration that exceeds a reference value.

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