INTERMITTENT DRIVING METHOD OF SEMICONDUCTOR GAS SENSOR,申请号JP20090146277-传众专利搜索

INTERMITTENT DRIVING METHOD OF SEMICONDUCTOR GAS SENSOR

申请公布号：JP2011002358(A)

申请号：JP20090146277

申请日期：2009.06.19

申请公布日期：2011.01.06

申请人：

FUJI ELECTRIC SYSTEMS CO LTD

发明人：FURUTA TOSHITAKA;SUZUKI TAKUYA;NARITA MASATAKA;OKAMURA MAKOTO

分类号：G01N27/12

主分类号：G01N27/12

摘要：PROBLEM TO BE SOLVED: To provide an intermittent driving method of a semiconductor gas sensor having excellent selectivity to methane and hydrogen, which detects a detection object highly accurately by having a sufficient CO concentration gradient.SOLUTION: The intermittent driving method of the semiconductor gas sensor is described as follows: in order to clean miscellaneous gas adsorbed on a gas detection film, a sensor is heated up to a high temperature state (High) by a heater and held in the high temperature state, and gas is detected; in order to determine a concentration of carbon dioxide, the sensor is lowered to a first low temperature state (Low1) and held in the first low temperature state; further, in order to adsorb only carbon dioxide onto a gas sensing film, the sensor is once switched off (Off) and hold in the off-state; and in order to measure selectivity of methane and hydrogen to carbon dioxide, the sensor is raised up to a second low temperature state (Low2) and held in the second low temperature state.