HIGH-k CAPPED BLOCKING DIELECTRIC BANDGAP ENGINEERED SONOS AND MONOS,申请号US20100881570-传众专利搜索

HIGH-k CAPPED BLOCKING DIELECTRIC BANDGAP ENGINEERED SONOS AND MONOS

申请公布号：US2011003452(A1)

申请号：US20100881570

申请日期：2010.09.14

申请公布日期：2011.01.06

申请人：

MACRONIX INTERNATIONAL CO., LTD.

发明人：LAI SHENG CHIH;LUE HANG-TING;LIAO CHIEN WEI

分类号：H01L21/336;H01L21/28

主分类号：H01L21/336

摘要：A blocking dielectric engineered, charge trapping memory cell includes a charge trapping element that is separated from a gate by a blocking dielectric including a buffer layer in contact with the charge trapping element, such as silicon dioxide which can be made with high-quality, and a second capping layer in contact with said one of the gate and the channel. The capping layer has a dielectric constant that is higher than that of the first layer, and preferably includes a high-&kgr; material. The second layer also has a conduction band offset that is relatively high. A bandgap engineered tunneling layer between the channel and the charge trapping element is provided which, in combination with the multilayer blocking dielectric described herein, provides for high-speed erase operations by hole tunneling. In an alternative, a single layer tunneling layer is used.