SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, CIRCUIT SUBSTRATE, ELECTRO-OPTICAL APPARATUS, AND ELECTRONIC EQUIPMENT,申请号US20100852826-传众专利搜索

SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, CIRCUIT SUBSTRATE, ELECTRO-OPTICAL APPARATUS, AND ELECTRONIC EQUIPMENT

申请公布号：US2010295176(A1)

申请号：US20100852826

申请日期：2010.08.09

申请公布日期：2010.11.25

申请人：

SEIKO EPSON CORPORATION

发明人：ITO HARUKI

分类号：G02F1/13;H01L29/40;G02F1/1345;H01L21/3205;H01L21/60;H01L23/485;H01L23/52

主分类号：G02F1/13

摘要：A semiconductor device is provided with a plurality of protrusions which are made of a resin and which protrude higher than electrodes, and conductive layers which are electrically connected to the electrodes and which cover the top surfaces of the protrusions. A method for manufacturing the semiconductor device includes a step of applying a layer of the resin to the semiconductor device except for the electrodes, a step of patterning the conductive layers on the electrodes and the layer of the resin in accordance with the protrusions, and a step of removing the layer of the resin located between the conductive layers by the use of the patterned conductive layers as masks so as to form the protrusions.