VOLTAGE EXCITED PIEZOELECTRIC RESISTANCE MEMORY CELL SYSTEM,申请号US20090445884-传众专利搜索

VOLTAGE EXCITED PIEZOELECTRIC RESISTANCE MEMORY CELL SYSTEM

申请公布号：US2010276655(A1)

申请号：US20090445884

申请日期：2009.02.16

申请公布日期：2010.11.04

申请人：

4D-S PTY. LTD.

发明人：SPRINGER GILBERT

分类号：H01L45/00

主分类号：H01L45/00

摘要：The present invention discloses a memory system comprising a plurality of crystals, and at least two conductors. The at least two conductors being orthogonal to each other. Wherein at least one of the plurality of crystals are bounded by the orthogonal intersection of the at least two conductors.

一种基于温湿监测的粮仓内部点粮食水分检测方法