METHOD FOR FABRICAING SEMICONDUCTOR DEVICE HAVING SILICON ON INSULATOR STRUCTURE

申请公布号：KR20100110534(A)

申请号：KR20090028912

申请日期：2009.04.03

申请公布日期：2010.10.13

申请人：

HYNIX SEMICONDUCTOR INC.

发明人：BAEK, SEUNG BEOM;AHN, TAE HANG;LEE, YOUNG HO;LEE, MI HYOUNG;KIM, TAE JUNG

分类号：H01L27/12;H01L21/20

主分类号：H01L27/12

摘要：PURPOSE: A method for manufacturing a semiconductor device with an SOI structure is provided to reduce manufacturing processes by omitting processes for forming and removing a silicon Ge layer. CONSTITUTION: An SOI insulation layer pattern(21A) is formed on a silicon wafer(20). A silicon layer(22) is formed on the surface including the SOI insulation layer. A device isolation trench is formed by etching the silicon layer and the silicon wafer. The device isolation layer is formed by burying the device isolation trench.

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