SEMICONDUCTOR DEVICE AND ASSOCIATED METHODS OF MANUFACTURE
申请公布号:KR20100101450(A)
申请号:KR20090019950
申请日期:2009.03.09
申请公布日期:2010.09.17
发明人:KIM, SUN JUNG;LEE, JONG CHEOL;KOO, BON YOUNG;HWANG, WAN SIK;LEE, JOON GON;KIM, JUNG HYEON
分类号:H01L21/336
主分类号:H01L21/336
摘要:PURPOSE: A semiconductor device and a method of manufacturing method are provided to implement a semiconductor device having high reliable metal oxide nitride film. CONSTITUTION: A metal nitride layer and a metal oxide layer are formed in on a semiconductor substrate. A metal oxide nitride film(128) is formed on a substrate having a metal nitride layer and a metal oxide layer through a heat treatment process. The metal oxide nitride film is reacted with the metal nitride layer, the metal oxide layer, and a second metal nitride layer.
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