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SEMICONDUCTOR LIGHT-EMITTING DEVICE

申请公布号:US2010230706(A1)

申请号:US20100755019

申请日期:2010.04.06

申请公布日期:2010.09.16

申请人:
HUGA OPTOTECH INC.

发明人:TSAI TZONG LIANG;WANG WEI-KAI;LIN SU-HUI;LU YI-CUN

分类号:H01L33/02

主分类号:H01L33/02

摘要:The invention discloses a semiconductor light-emitting device, which includes a substrate, a first conductive type semiconductor material layer, a second conductive type semiconductor material layer, a light-emitting layer, a first electrode, a second electrode, and a plurality of bump structures. The first conductive type semiconductor material layer is formed on the substrate and has an upper surface which includes a first region and a second region distinct from the first region. The first electrode is formed on the first region. The light-emitting layer and the second conductive type semiconductor material layer are formed on the second region. The bump structures are formed on the upper surface of the first conductive type semiconductor material layer and between the first region and the second region. At least one recess is formed in the sidewall of each bump structure. Alternatively, the sidewall of each bump structure has a curved contour.

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