Compound semiconductor device,申请号US20080059708-传众专利搜索

Compound semiconductor device

申请公布号：US7795622(B2)

申请号：US20080059708

申请日期：2008.03.31

申请公布日期：2010.09.14

申请人：

FUJITSU LIMITED

发明人：KIKKAWA TOSHIHIDE;IMANISHI KENJI

分类号：H01L29/72

主分类号：H01L29/72

摘要：A compound semiconductor device having a transistor structure, includes a substrate, a first layer formed on the substrate and comprising GaN, a second layer formed over the first layer and containing InN whose lattice constant is larger than the first layer, a third layer formed over the second layer and comprising GaN whose energy bandgap is smaller than the second layer, and a channel region layer formed on the third layer.