Channelized Gate Level Cross-Coupled Transistor Device with Direct Electrical Connection of Cross-Coupled Transistors to Common Diffusion Node,申请号US20100754050-传众专利搜索

Channelized Gate Level Cross-Coupled Transistor Device with Direct Electrical Connection of Cross-Coupled Transistors to Common Diffusion Node

申请公布号：US2010187626(A1)

申请号：US20100754050

申请日期：2010.04.05

申请公布日期：2010.07.29

申请人：

TELA INNOVATIONS, INC.

发明人：BECKER SCOTT T.

分类号：H01L29/78

主分类号：H01L29/78

摘要：Each of first and second PMOS transistors, and first and second NMOS transistors has a respective diffusion terminal with a direct electrical connection to a common node, and has a respective gate electrode defined within any one gate level channel. Each gate level channel is uniquely associated with and defined along one of a number of parallel oriented gate electrode tracks. The first PMOS transistor gate electrode is electrically connected to the second NMOS transistor electrode. The second PMOS transistor gate electrode is electrically connected to the first NMOS transistor gate electrode. The first and second PMOS transistors, and the first and second NMOS transistors together define a cross-coupled transistor configuration having commonly oriented gate electrodes formed from respective rectangular-shaped layout features.