A TRANSISTOR WITH AN EMBEDDED STRAIN INDUCING MATERIAL HAVING A GRADUALLY SHAPED CONFIGURATION
申请公布号:WO2010076017(A1)
申请号:WO2009EP09306
申请日期:2009.12.29
申请公布日期:2010.07.08
发明人:KRONHOLZ, STEPHAN;PAPAGEORGIOU, VASSILIOS;BEERNINK, GUNDA
分类号:H01L21/8234;H01L21/336;H01L21/8238
主分类号:H01L21/8234
摘要:<p>In a transistor a strain-inducing semiconductor alloy, such as silicon/germanium, silicon/carbon and the like, may positioned very close to the channel region by providing gradually shaped cavities which may then be filled with the strain- inducing semiconductor alloy. For this purpose, two or more "disposable" spacer elements of different etch behaviour may be used in order to define different lateral off-sets at different depths of the corresponding cavities. Consequently, enhanced uniformity and thus reduced transistor variability may be accomplished even for sophisticated semiconductor devices.</p>