SEMICONDUCTOR THIN FILM, SEMICONDUCTOR THIN FILM MANUFACTURING METHOD AND SEMICONDUCTOR ELEMENT

申请公布号：US2010127256(A1)

申请号：US20080598980

申请日期：2008.04.23

申请公布日期：2010.05.27

申请人：

IDEMITSU KOSAN CO., LTD.

发明人：INOUE KAZUYOSHI;UTSUNO FUTOSHI;HONDA KATSUNORI

分类号：H01L29/22;H01L21/34

主分类号：H01L29/22

摘要：An amorphous oxide thin film containing amorphous oxide is exposed to an oxygen plasma generated by exciting an oxygen-containing gas in high frequency. The oxygen plasma is preferably generated under the condition that applied frequency is 1 kHz or more and 300 MHz or less and pressure is 5 Pa or more. The amorphous oxide thin film is preferably exposed by a sputtering method, ion-plating method, vacuum deposition method, sol-gel method or fine particle application method.

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