METAL WIRING OF SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME,申请号KR20080085396-传众专利搜索

METAL WIRING OF SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

申请公布号：KR20100026407(A)

申请号：KR20080085396

申请日期：2008.08.29

申请公布日期：2010.03.10

申请人：

HYNIX SEMICONDUCTOR INC.

发明人：JUNG, DONG HA;YEOM, SEUNG JIN;KIM, BAEK MANN;LEE, NAM YEAL

分类号：H01L21/28;H01L21/3205

主分类号：H01L21/28

摘要：<p>PURPOSE: The metal wiring of a semiconductor device and a method for manufacturing the same are provided to improve the property of a diffusion barrier layer by stacking an MoB2 layer, an MoxByNz layer and an Mo layer to form the diffusion barrier layer. CONSTITUTION: An insulating layer(110) is formed on the upper side of a semiconductor substrate(100). The insulation layer includes a wiring formation area. A diffusion barrier layer(120) is formed on the surface of the wiring formation area of the insulation layer. An MoB2 layer(112), an MoxByNz layer(114) and a Mo layer(116) are stacked to form the diffusion barrier layer. The MoxByNz layer is an amorphous phase. The metal layer is formed on the diffusion barrier layer in order to fill the wiring formation area.</p>