DIAMOND-LIKE CARBON AND MANUFACTURING METHOD THEREOF,申请号JP20080184765-传众专利搜索

DIAMOND-LIKE CARBON AND MANUFACTURING METHOD THEREOF

申请公布号：JP2010024476(A)

申请号：JP20080184765

申请日期：2008.07.16

申请公布日期：2010.02.04

申请人：

PLASMA ION ASSIST CO LTD

发明人：SUZUKI YASUO;WATANABE MASANORI;NAKAJIMA KENJIRO;TODA TADAO

分类号：C23C16/27;C01B31/02;C23C16/46;C23C16/515;C23C16/56;H01L21/205

主分类号：C23C16/27

摘要：<P>PROBLEM TO BE SOLVED: To provide a DLC thin film material which is p-type conduction in electric conduction, and has low resistivity and high hardness, to provide a manufacturing method of the DLC film, and to provide an industrial product using the DLC film. Ž<P>SOLUTION: In the diamond-like carbon in which p-type dopant such as boron and magnesium of III group elements or II group elements of the Periodic Table, its electric conduction of p-type conduction. High concentration plasma of hydrocarbon gas of low molecular quantity is generated, and a base material to be worked is installed so as to be brought into contact with discharge plasma. The temperature of the base material is kept at ≥200°C, the positive and negative or negative pulse voltage of ≥1 kV is applied to the base material to manufacture a p-type conduction DLC film on the surface of the base material. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž