CMOS image sensor,申请号US20060616272-传众专利搜索

CMOS image sensor

申请公布号：US7642117(B2)

申请号：US20060616272

申请日期：2006.12.26

申请公布日期：2010.01.05

申请人：

DONGBU HITEK CO., LTD.

发明人：WOO HYUK

分类号：H01L21/00

主分类号：H01L21/00

摘要：Embodiments relate to a complementary metal oxide semiconductor (CMOS) image sensor. According to embodiments, the CMOS image sensor may include a semiconductor substrate, an interlayer insulating layer, a color filter layer, an overcoat layer, and a plurality of microlenses. The semiconductor substrate may include a plurality of photodiodes and transistors with a constant interval. The color filter layer may be formed on the interlayer insulating layer, and respective color filters of the color filter layer correspond to respective photodiodes. The overcoat layer may have rounded trenches at a portion corresponding to each photodiode and may be formed on a surface of the semiconductor substrate. Each of the plurality of microlenses may have a convex lens shape and is formed inside the trench.