INTEGRATED CIRCUIT CHIP WITH FETS HAVING MIXED BODY THICKNESSES AND METHOD OF MANUFACTURE THEREOF,申请号US20090541641-传众专利搜索

INTEGRATED CIRCUIT CHIP WITH FETS HAVING MIXED BODY THICKNESSES AND METHOD OF MANUFACTURE THEREOF

申请公布号：US2009302387(A1)

申请号：US20090541641

申请日期：2009.08.14

申请公布日期：2009.12.10

申请人：

INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人：JOSHI RAJIV V.;HSU LOUIS C.;GLUSCHENKOV OLEG

分类号：H01L27/12

主分类号：H01L27/12

摘要：An Integrated Circuit (IC) chip that may be a bulk CMOS IC chip with silicon on insulator (SOI) Field Effect Transistors (FETs) and method of making the chip. The IC chip includes areas with pockets of buried insulator strata and FETs formed on the strata are SOI FETs. The SOI FETs may include Partially Depleted SOI (PD-SOI) FETs and Fully Depleted SOI (FD-SOI) FETs and the chip may include bulk FETs as well. The FETs are formed by contouring the surface of a wafer, conformally implanting oxygen to a uniform depth, and planarizing to remove the Buried OXide (BOX) in bulk FET regions.