SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME,申请号KR20080048634-传众专利搜索

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

申请公布号：KR20090122696(A)

申请号：KR20080048634

申请日期：2008.05.26

申请公布日期：2009.12.01

申请人：

HYNIX SEMICONDUCTOR INC.

发明人：JEON, KWANG SEOK

分类号：H01L21/8247;H01L27/115

主分类号：H01L21/8247

摘要：<p>PURPOSE: A semiconductor device and a method for manufacturing the same is provided to prevent the tungsten sidewall in a post cleaning by etching a side wall and forming a protective film. CONSTITUTION: In a semiconductor device and a method for manufacturing the same, a tunnel insulating layer(101), a floating gate anisotropic conductive film(102), a dielectric film(103), a control gate conductive layer(104) and a gate electrode layer(105) are successively laminated on a semiconductor substrate(100). A first protective film is formed on the sidewall of the gate electrode layer. The second protective film is formed along to the surface of the gate pattern and the first protective film. A critical dimension of the gate electrode layer is small than that of the control gate conductive layer. The first protective film is formed at the same sidewall of the gate electrode film of the gate pattern. The first protective film is formed on the nitride film, and the second protective film is formed on an oxide film.</p>