Semiconductor device with a low dielectric constant film between lower interconnections,申请号US20080277933-传众专利搜索

Semiconductor device with a low dielectric constant film between lower interconnections

申请公布号：US7622807(B2)

申请号：US20080277933

申请日期：2008.11.25

申请公布日期：2009.11.24

申请人：

PANASONIC CORPORATION

发明人：UEDA TETSUYA

分类号：H01L29/40

主分类号：H01L29/40

摘要：A method for fabricating a semiconductor device includes the steps of: forming a plurality of lower interconnections at intervals in a first insulating film; removing a portion of the first insulating film located between the lower interconnections, thereby forming an interconnection-to-interconnection gap; forming a second insulating film over the first insulating film in which the lower interconnections and the interconnection-to-interconnection gap are formed such that an air gap is formed out of the interconnection-to-interconnection gap; and forming, in the second insulating film, a connection portion connected to one of the lower interconnections and an upper interconnection connected to the connection portion. The connection portion is formed to be connected to one of the lower interconnections not adjacent to the air gap.