A METHOD OF FABRICATING A COMPOSITE STRUCTURE WITH A STABLE BONDING LAYER OF OXIDE,申请号WO2008EP68311-传众专利搜索

A METHOD OF FABRICATING A COMPOSITE STRUCTURE WITH A STABLE BONDING LAYER OF OXIDE

申请公布号：WO2009092506(A3)

申请号：WO2008EP68311

申请日期：2008.12.29

申请公布日期：2009.11.19

申请人：

S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES;FAURE, BRUCE;MARCOVECCHIO, ALEXANDRA

发明人：FAURE, BRUCE;MARCOVECCHIO, ALEXANDRA

分类号：H01L21/762;H01L21/20

主分类号：H01L21/762

摘要：The invention concerns a method of fabricating a composite structure (14) comprising at least one thin film (4) bonded to a support substrate (10), a bonding layer of oxide (12) being formed by deposition between the support substrate (10) and the thin film (4). The thin film and the support substrate have a mean thermal expansion coefficient of 7 X 10-6 K-1 or more. The bonding layer of oxide (12) is formed by low pressure chemical vapor deposition (LPCVD) of a layer of oxide on the bonding face of the support substrate (10) and/or on the bonding face of the thin film (4). The thin film has a thickness of 5 micrometers or less while the thickness of the layer of oxide (12) is equal to or greater than the thickness of the thin film (4).