METHOD OF DICING SEMICONDUCTOR WAFER, AND METHOD OF CONNECTING SEMICONDUCTOR CHIP WITH SUBSTRATE,申请号JP20080254371-传众专利搜索

METHOD OF DICING SEMICONDUCTOR WAFER, AND METHOD OF CONNECTING SEMICONDUCTOR CHIP WITH SUBSTRATE

申请公布号：JP2009260229(A)

申请号：JP20080254371

申请日期：2008.09.30

申请公布日期：2009.11.05

申请人：

HITACHI CHEM CO LTD

发明人：ENOMOTO TETSUYA;HONDA KAZUTAKA;NAGAI AKIRA;HATAKEYAMA KEIICHI

分类号：H01L21/301;H01L21/60

主分类号：H01L21/301

摘要：PROBLEM TO BE SOLVED: To provide a method of dicing a semiconductor wafer that forms semiconductor chips having resin layers formed at a time, and to provide a method of connecting a semiconductor chip formed by the method of dicing with a substrate. SOLUTION: The method of dicing includes a first process of forming an insulating resin layer 3 over the entire circuit surface S1 of the semiconductor wafer 1 such that projection electrodes 2 are embedded, a second process of sticking a dicing tape 8 on the side of the insulating resin layer 3 formed on the circuit surface S1 in the first process to fix the semiconductor wafer 1 to a wafer ring 7, and a third process of dicing the semiconductor wafer 1 fixed to the wafer ring 7 in the second process from the side of a surface S2 opposite to the circuit surface S1 together with the insulating resin layer 3 to divide the semiconductor wafer 1 into individual semiconductor chips 11. COPYRIGHT: (C)2010,JPO&INPIT