Solid-state imaging device, manufacturing method for the same, and imaging apparatus,申请号US20090379336-传众专利搜索

Solid-state imaging device, manufacturing method for the same, and imaging apparatus

申请公布号：US2009230494(A1)

申请号：US20090379336

申请日期：2009.02.19

申请公布日期：2009.09.17

申请人：

SONY CORPORATION

发明人：TAKIZAWA MASAAKI

分类号：H01L31/0216;H01L27/14;H01L27/148;H01L31/18;H04N5/335;H04N5/369;H04N5/372;H04N5/374

主分类号：H01L31/0216

摘要：A solid-state imaging device includes: a pixel section including, in a semiconductor substrate, plural photoelectric conversion sections that photoelectrically convert incident light to generate signal charges; metal wirings formed, on a first insulating film formed on the semiconductor substrate, above regions among the photoelectric conversion sections and above the periphery of the pixel section; a second insulating film formed on the first insulating film to cover the metal wirings; a first light shielding film formed on the second insulating film and having an opening above the pixel section; and a second light shielding film formed above the metal wirings above the pixel section and having thickness smaller than that of the first light shielding film.