ETCHING SOLUTION COMPOSITION FOR FORMATION OF METAL LINE,申请号KR20080020809-传众专利搜索

ETCHING SOLUTION COMPOSITION FOR FORMATION OF METAL LINE

申请公布号：KR20090095709(A)

申请号：KR20080020809

申请日期：2008.03.06

申请公布日期：2009.09.10

申请人：

DONGWOO FINE-CHEM CO., LTD.

发明人：KIM, KY SUB;LEE, SEUNG YONG;LEE, JOON WOO;JIN, YOUNG JUN;PARK, YOUNG CHUL;YANG, SEUNG JAE;JANG, SANG HOON;LIM, MIN KI;LEE, HYUN KYU

分类号：C23F1/16;C23F1/14

主分类号：C23F1/16

摘要：An etchant composition for formation of metal lines is provided to secure stability of etchant and uniform etching performance, thereby preventing damage to underlayer and equipment. An etchant composition for formation of metal lines comprises H3PO4 40~70 weight%, HNO3 2~10 weight%, CH3COOH 5~20 weight%, organic acid 0.1~5 weight% except for CH3COOH, phosphate 0.1~5 weight%, a compound including amino radical and carboxyl group 0.1~5 weight%, and the rest water. The organic acid except for CH3COOH is made of one or two selected from the group consisting of butanoic acid, citric acid, formic acid, gluconic acid, glycolic acid, malonic acid, oxalic acid, pentanoic acid, and other water-soluble organic acid. The phosphate is made of sodium dihydrogen phosphate or/and otassium dihydrogen phosphate. The compound including compound including amino radical and carboxyl group is made of one or two selected from the group consisting of alanine compound, aminobutyric acid compound, glutamic acid compound, glycine compound, iminodiacetic acid compound, nitrilotriacetic acid compound, and sarcosine compound.