Phase-change memory device and method of manufacturing the same,申请号US20090320869-传众专利搜索

Phase-change memory device and method of manufacturing the same

申请公布号：US2009176329(A1)

申请号：US20090320869

申请日期：2009.02.06

申请公布日期：2009.07.09

申请人：

KIM YOUNG-TAE;HWANG YOUNG-NAM;KIM TAI-KYUNG;CHUNG WON-YOUNG;LEE KEUN-HO

发明人：KIM YOUNG-TAE;HWANG YOUNG-NAM;KIM TAI-KYUNG;CHUNG WON-YOUNG;LEE KEUN-HO

分类号：H01L21/06;H01L27/115;G11C29/00;H01L27/10;H01L27/24;H01L45/00

主分类号：H01L21/06

摘要：In a method of forming a phase-change memory device, a variable resistance member may be formed on a s semiconductor substrate having a contact region, and a first electrode may be formed to contact a first portion of the variable resistance member and to be electrically connected to the contact region. A second electrode may be formed so as to contact a second portion of the variable resistance member.