SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME,申请号WO2008JP70283-传众专利搜索

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

申请公布号：WO2009060934(A1)

申请号：WO2008JP70283

申请日期：2008.11.07

申请公布日期：2009.05.14

申请人：

NEC CORPORATION;TAKEUCHI, KIYOSHI

发明人：TAKEUCHI, KIYOSHI

分类号：H01L21/8244;H01L21/3205;H01L21/336;H01L21/8234;H01L23/52;H01L27/04;H01L27/088;H01L27/11;H01L29/41;H01L29/417;H01L29/423;H01L29/49;H01L29/78;H01L29/786

主分类号：H01L21/8244

摘要：<p>Disclosed is a semiconductor device having a plurality of cells which include a plurality of transistors. Each transistor is provided with a channel section , which is arranged on a substrate and permits a current to flow in a direction vertical to a surface of the substrate; a lower source/drain section, which is on a lower end side of the channel section and serves as a source or a drain; an upper source/drain section, which is on an upper end side of the channel section and serves as the remaining source or the drain; and a gate electrode arranged on the channel section, with a gate insulating film in between. The upper side source/drain section is connected to a wiring arranged above the transistor. The lower source/drain section is connected to the lower source/drain section of other transistor in the cell wherein the transistor is included.</p>