GAIN-COUPLED DISTRIBUTED FEEDBACK SEMICONDUCTOR LASER INCLUDING FIRST-ORDER AND SECOND-ORDER GRATINGS,申请号US20080119586-传众专利搜索

GAIN-COUPLED DISTRIBUTED FEEDBACK SEMICONDUCTOR LASER INCLUDING FIRST-ORDER AND SECOND-ORDER GRATINGS

申请公布号：US2009080482(A1)

申请号：US20080119586

申请日期：2008.05.13

申请公布日期：2009.03.26

申请人：

APPLIED OPTOELECTRONICS, INC.

发明人：MAKINO TOSHIHIKO

分类号：H01S3/08;H01S5/026

主分类号：H01S3/08

摘要：A gain-coupled distributed feedback (DFB) semiconductor laser includes a grating formed by grooves through at least a part of an active region of a laser cavity. The DFB laser may be configured with a substantially pure gain-coupled grating and may be configured to provide facet power asymmetry. The grating may include at least a first-order grating section and a second-order grating section. A lasing wavelength may be obtained at the Bragg wavelength of the second-order grating section by substantially eliminating index coupling in the grating. The first-order grating section may act as a reflector for the lasing wavelength, thereby producing asymmetric power distribution in the laser cavity.