SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE,申请号JP19810198593-传众专利搜索

SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

申请公布号：JPS58101438(A)

申请号：JP19810198593

申请日期：1981.12.11

申请公布日期：1983.06.16

申请人：

HITACHI SEISAKUSHO KK;HITACHI MAIKURO COMPUTER ENGINEERING KK

发明人：TAKAHASHI YOSHIKAZU;SATOU YASUO

分类号：H01L27/04;H01L21/3205;H01L21/82;H01L21/822;H01L23/52;H01L23/64;H01L27/118

主分类号：H01L27/04

摘要：PURPOSE:To eliminate the adverse influences of the external floating capacity and the inductance of lead wirings affected to a semiconductor integrated circuit device by respectively providing independently isolated load resistances between a plurality of output buffers in an IC and bonding pads. CONSTITUTION:A polysilicon resistor 10 is formed in advance together with other IC forming element on an Si pellet 2 between elements forming output buffers 7a-7n and bonding pads 9. In order to obtain an IC in which a circuit 8 performs the prescribed logic operation and the buffers 7a-7n instantaneously output, the influences of external floating capacity C and the inductance L of lead wirings 3 are small. Accordingly, the buffers are shortcircuited with the pads via wirings 11. On the other hand, in order to output signals of large number of bits from the buffers 7 in parallel with each other, the resistor 10 is inserted between the buffers and the pads 9, thereby reducing the transient current of charging and discharging the C and preventing the induction of noise and the fluctuation of the level of the output signal by a power source or grounding wirings.