SEMICONDUCTOR MANUFACTURING APPARATUS,申请号JP19840251072-传众专利搜索

SEMICONDUCTOR MANUFACTURING APPARATUS

申请公布号：JPS61129817(A)

申请号：JP19840251072

申请日期：1984.11.28

申请公布日期：1986.06.17

申请人：

MITSUBISHI ELECTRIC CORP

发明人：KOBAYASHI TOSHIYUKI;OTOMO YOSHIMI;KINOSHITA NORIYOSHI;ODA MASAO

分类号：H01L21/20;H01L21/205;H01L21/263;H01L21/31

主分类号：H01L21/20

摘要：PURPOSE:To improve uniformity of film thickness with an uniform gas concentration, by supplying reaction gas into the reaction chamber in the direction perpendicular to a chamber axis. CONSTITUTION:Reaction gas 7 is supplied into the reaction gas supplying chamber 12 and is introduced into the reaction chamber from a supplying port 12b of the supplying chamber 12. The reacted gas 8 is flowed into the exhaustion chamber 13 from an exhaustion port 13b and is exhausted from the exhaustion chamber 13 outside the quartz glass tube 21. At this time, the gas 7 is supplied into the reaction chamber in the direction perpendicular to the axis of the glass tube 21, so that the distance along which the gas 7 flows becomes shorter to make the gas concentration in the flow direction uniform. Moreover, since the gas 7 is introduced into the reaction chamber after it is supplied into the supplying chamber 12, the pressure distribution of the gas 7 in the direction of the glass tube axis becomes uniform so that the gas concentration in the direction perpendicular to the flow direction can also become uniform. As the result, uniformity of film thickness of thin films can be improved.