Manufacturing method of SOI substrate and manufacturing method of semiconductor device,申请号US20080078410-传众专利搜索

Manufacturing method of SOI substrate and manufacturing method of semiconductor device

申请公布号：US2008280424(A1)

申请号：US20080078410

申请日期：2008.03.31

申请公布日期：2008.11.13

申请人：

SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人：YAMAZAKI SHUNPEI;ARAI YASUYUKI

分类号：H01L21/00

主分类号：H01L21/00

摘要：After the plurality of single-crystal semiconductor layers are provided adjacent to each other with a certain distance over a glass substrate which is a support substrate, heat treatment is performed on the glass substrate. The support substrate shrinks by this heat treatment, and the adjacent single-crystal semiconductor layers are in contact with each other due to the shrink. Energy beam irradiation is performed with the plurality of single-crystal semiconductor layers being in contact with each other, the plurality of single-crystal semiconductor layers are integrated, and thus a continuous single-crystal semiconductor layer is formed.