METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE,申请号KR20070031178-传众专利搜索

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

申请公布号：KR20080088316(A)

申请号：KR20070031178

申请日期：2007.03.29

申请公布日期：2008.10.02

申请人：

HYNIX SEMICONDUCTOR INC.

发明人：CHUN, SUNG IL

分类号：H01L21/82

主分类号：H01L21/82

摘要：A method for manufacturing a semiconductor device is provided to prevent the expansion of a gate and a crack generation in a dielectric by generating a void on an upper portion and a side of a dummy gate. A gate on which a gate conductive layer(206) is disposed is formed on a fuse region of a semiconductor substrate(200). A dielectric(214) is formed to cover the gate. The dielectric is etched to form a contact hole(H) that exposes the gate conductive layer. A barrier layer is formed on the whole surface of the substrate including the contact hole so that a void(V) is generated in the contact hole. A conductive layer is formed on the barrier layer. The conductive layer and the barrier layer are etched so that an upper portion of the void generated in the contact hole is opened. Interlayer dielectrics(220,224) are formed on the resultant substrate structure where the conductive layer and the barrier layer are etched so that the void in the contact hole whose upper portion is opened is not gap-filled. A fuse(226) is formed on the interlayer dielectrics.