Digital parallel electron beam lithography stamp,申请号US20060418057-传众专利搜索

Digital parallel electron beam lithography stamp

申请公布号：US7425715(B2)

申请号：US20060418057

申请日期：2006.05.05

申请公布日期：2008.09.16

申请人：

MOUTTET BLAISE LAURENT

发明人：MOUTTET BLAISE LAURENT

分类号：G21K5/00

主分类号：G21K5/00

摘要：An array of vertically aligned electron emitting nanotips such as multiwall carbon nanotubes are formed for use as a lithographic stamp. Crosswire addressing is used to generate electron emission from particular nanotips within the array. The nanotip array may be used to cure a resist, produce localized electrochemical reactions, establish localized electrostatic charge distributions, or perform other desirable coating or etching process steps so as to create nanoelectronic circuitry or to facilitate molecular or nanoscale processing.