FinFET structure with contacts

申请公布号：US7339241(B2)

申请号：US20050216974

申请日期：2005.08.31

申请公布日期：2008.03.04

申请人：

FREESCALE SEMICONDUCTOR, INC.

发明人：ORLOWSKI MARIUS K.;STEPHENS TAB A.

分类号：H01L29/76;H01L29/94;H01L31/00

主分类号：H01L29/76

摘要：A FinFET, which by its nature has both elevated source/drains and an elevated channel that are portions of an elevated semiconductor portion that has parallel fins and one source/drain on one side of the fins and another source/drain on the other side of the fins, has all of the source/drain contacts away from the fins as much as reasonably possible. The gate contacts extend upward from the top surface of the elevated semiconductor portion. The gate also extends upward from the top surface of the elevated semiconductor portion. The contacts are located between the fins where the gate is below the height of the elevated semiconductor portion so the contacts are as far as reasonably possible from the gate, thereby reducing gate to drain capacitance and providing additional assistance to alignment tolerance.

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